
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Package Type
H2PAK
Series
DeepGate, STripFET
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
3.9mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
250W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
117nC
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Height
4.8mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Детайли за продукта
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Информацията за складовите наличности временно не е налична.
€ 62,53
€ 3,127 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
20
€ 62,53
€ 3,127 Each (Supplied on a Reel) (ex VAT)
Информацията за складовите наличности временно не е налична.
Производствен пакет (Ролка)
20
| количество | Единична цена | Per Ролка |
|---|---|---|
| 20 - 98 | € 3,127 | € 6,25 |
| 100 - 198 | € 2,793 | € 5,59 |
| 200+ | € 2,396 | € 4,79 |
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Package Type
H2PAK
Series
DeepGate, STripFET
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
3.9mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
250W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
117nC
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Height
4.8mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Детайли за продукта
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.