Технически документи
Спецификации
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
30A
Product Type
Trench Gate Field Stop IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
260W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
15.75mm
Height
20.15mm
Standards/Approvals
RoHS
Width
5.15mm
Series
HB
Automotive Standard
No
Детайли за продукта
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Информацията за складовите наличности временно не е налична.
€ 5,23
€ 2,613 Each (In a Pack of 2) (ex VAT)
Стандарт
2
€ 5,23
€ 2,613 Each (In a Pack of 2) (ex VAT)
Информацията за складовите наличности временно не е налична.
Стандарт
2
| количество | Единична цена | Per Опаковка |
|---|---|---|
| 2 - 18 | € 2,613 | € 5,22 |
| 20 - 98 | € 2,525 | € 5,05 |
| 100 - 198 | € 2,449 | € 4,90 |
| 200+ | € 2,123 | € 4,25 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Технически документи
Спецификации
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
30A
Product Type
Trench Gate Field Stop IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
260W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
15.75mm
Height
20.15mm
Standards/Approvals
RoHS
Width
5.15mm
Series
HB
Automotive Standard
No
Детайли за продукта
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
