
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
Rectifier & Schottky Diode
Mount Type
Through Hole
Package Type
TO-247
Maximum Continuous Forward Current If
40A
Peak Reverse Repetitive Voltage Vrrm
1200V
Diode Configuration
Dual
Series
STPS
Rectifier Type
Rectifier Diode
Pin Count
3
Minimum Operating Temperature
-65°C
Peak Non-Repetitive Forward Surge Current Ifsm
140A
Maximum Operating Temperature
175°C
Length
15.75mm
Height
34.95mm
Standards/Approvals
RoHS
Automotive Standard
AEC-Q101
Страна на произход
China
Детайли за продукта
The STMicroelectronics schottky silicon carbide diode available in TO-247, is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.
Информацията за складовите наличности временно не е налична.
€ 317,89
€ 10,596 Each (In a Tube of 30) (ex VAT)
30
€ 317,89
€ 10,596 Each (In a Tube of 30) (ex VAT)
Информацията за складовите наличности временно не е налична.
30
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
Rectifier & Schottky Diode
Mount Type
Through Hole
Package Type
TO-247
Maximum Continuous Forward Current If
40A
Peak Reverse Repetitive Voltage Vrrm
1200V
Diode Configuration
Dual
Series
STPS
Rectifier Type
Rectifier Diode
Pin Count
3
Minimum Operating Temperature
-65°C
Peak Non-Repetitive Forward Surge Current Ifsm
140A
Maximum Operating Temperature
175°C
Length
15.75mm
Height
34.95mm
Standards/Approvals
RoHS
Automotive Standard
AEC-Q101
Страна на произход
China
Детайли за продукта
The STMicroelectronics schottky silicon carbide diode available in TO-247, is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.