
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
Diode
Mount Type
Surface
Package Type
PowerFLAT
Maximum Continuous Forward Current If
8A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
Single
Series
STPSC
Pin Count
5
Peak Reverse Current Ir
65μA
Maximum Forward Voltage Vf
1.95V
Minimum Operating Temperature
-40°C
Peak Non-Repetitive Forward Surge Current Ifsm
800A
Maximum Operating Temperature
175°C
Length
7.9mm
Height
0.75mm
Standards/Approvals
No
Automotive Standard
No
Детайли за продукта
The STMicroelectronics 650V power schottky silicon carbide diode has a current rating of 8A. It is an ultra high performance power schottky diode. It is manufactured using a silicon carbide substrate. It enables low drop forward voltage associated to high surge capabilities in low space environment such as telecom & network, industrial or renewable energy domain.
Информацията за складовите наличности временно не е налична.
€ 5 648,81
€ 1,883 Each (On a Reel of 3000) (ex VAT)
3000
€ 5 648,81
€ 1,883 Each (On a Reel of 3000) (ex VAT)
Информацията за складовите наличности временно не е налична.
3000
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
Diode
Mount Type
Surface
Package Type
PowerFLAT
Maximum Continuous Forward Current If
8A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
Single
Series
STPSC
Pin Count
5
Peak Reverse Current Ir
65μA
Maximum Forward Voltage Vf
1.95V
Minimum Operating Temperature
-40°C
Peak Non-Repetitive Forward Surge Current Ifsm
800A
Maximum Operating Temperature
175°C
Length
7.9mm
Height
0.75mm
Standards/Approvals
No
Automotive Standard
No
Детайли за продукта
The STMicroelectronics 650V power schottky silicon carbide diode has a current rating of 8A. It is an ultra high performance power schottky diode. It is manufactured using a silicon carbide substrate. It enables low drop forward voltage associated to high surge capabilities in low space environment such as telecom & network, industrial or renewable energy domain.