Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
9A
Maximum Drain Source Voltage Vds
950V
Package Type
TO-220
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
1.25Ω
Channel Mode
Enhancement
Maximum Power Dissipation Pd
90W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
13nC
Maximum Gate Source Voltage Vgs
30V
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Height
15.75mm
Length
10.4mm
Standards/Approvals
No
Width
4.6mm
Automotive Standard
No
Детайли за продукта
These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications Product status link requiring superior power density and high efficiency.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Информацията за складовите наличности временно не е налична.
€ 64,32
€ 1,286 Each (In a Tube of 50) (ex VAT)
50
€ 64,32
€ 1,286 Each (In a Tube of 50) (ex VAT)
Информацията за складовите наличности временно не е налична.
50
| количество | Единична цена | Per Тръба |
|---|---|---|
| 50 - 200 | € 1,286 | € 64,32 |
| 250 - 450 | € 1,255 | € 62,74 |
| 500+ | € 1,22 | € 60,99 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
9A
Maximum Drain Source Voltage Vds
950V
Package Type
TO-220
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
1.25Ω
Channel Mode
Enhancement
Maximum Power Dissipation Pd
90W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
13nC
Maximum Gate Source Voltage Vgs
30V
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Height
15.75mm
Length
10.4mm
Standards/Approvals
No
Width
4.6mm
Automotive Standard
No
Детайли за продукта
These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications Product status link requiring superior power density and high efficiency.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
