Vishay Dual N/P-Channel-Channel MOSFET, 4.7 A, 6.8 A, 40 V, 8-Pin SOIC SI4599DY-T1-GE3
Технически документи
Спецификации
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
4.7 A, 6.8 A
Maximum Drain Source Voltage
40 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
42.5 mΩ, 62 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
3 W, 3.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
2
Length
5mm
Typical Gate Charge @ Vgs
11.7 nC @ 10 V, 25 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4mm
Minimum Operating Temperature
-55 °C
Height
1.55mm
Страна на произход
China
Детайли за продукта
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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€ 15,03
€ 0,751 Each (In a Pack of 20) (ex VAT)
Стандарт
20
€ 15,03
€ 0,751 Each (In a Pack of 20) (ex VAT)
Информацията за складовите наличности временно не е налична.
Стандарт
20
Информацията за складовите наличности временно не е налична.
| количество | Единична цена | Per Опаковка |
|---|---|---|
| 20 - 180 | € 0,751 | € 15,03 |
| 200 - 480 | € 0,579 | € 11,58 |
| 500 - 980 | € 0,489 | € 9,77 |
| 1000 - 1980 | € 0,451 | € 9,02 |
| 2000+ | € 0,376 | € 7,51 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
4.7 A, 6.8 A
Maximum Drain Source Voltage
40 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
42.5 mΩ, 62 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
3 W, 3.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
2
Length
5mm
Typical Gate Charge @ Vgs
11.7 nC @ 10 V, 25 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4mm
Minimum Operating Temperature
-55 °C
Height
1.55mm
Страна на произход
China
Детайли за продукта
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products