Dual N/P-Channel MOSFET Transistor, 4.4 A, 5 A, 40 V, 8-Pin SOIC Vishay SI4567DY-T1-E3
Технически документи
Спецификации
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
4.4 A, 5 A
Maximum Drain Source Voltage
40 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
70 Ω, 122 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
2.75 W, 2.95 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-16 V, +16 V
Typical Gate Charge @ Vgs
12 nC @ 20 V, 8 nC @ 20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
5mm
Width
4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.5mm
Страна на произход
China
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Запитване за цена
Each (In a Pack of 10) (ex VAT)
Стандарт
10
Запитване за цена
Each (In a Pack of 10) (ex VAT)
Информацията за складовите наличности временно не е налична.
Стандарт
10
Информацията за складовите наличности временно не е налична.
Ideate. Create. Collaborate
JOIN FOR FREE
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Технически документи
Спецификации
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
4.4 A, 5 A
Maximum Drain Source Voltage
40 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
70 Ω, 122 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
2.75 W, 2.95 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-16 V, +16 V
Typical Gate Charge @ Vgs
12 nC @ 20 V, 8 nC @ 20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
5mm
Width
4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.5mm
Страна на произход
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products