Технически документи
Спецификации
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
6.8 A
Maximum Drain Source Voltage
200 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.67mm
Typical Gate Charge @ Vgs
44 nC @ 10 V
Width
9.65mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
4.83mm
Страна на произход
China
Детайли за продукта
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 20,25
€ 2,025 Each (In a Pack of 10) (ex VAT)
Стандарт
10
€ 20,25
€ 2,025 Each (In a Pack of 10) (ex VAT)
Информацията за складовите наличности временно не е налична.
Стандарт
10
Информацията за складовите наличности временно не е налична.
| количество | Единична цена | Per Опаковка |
|---|---|---|
| 10 - 10 | € 2,025 | € 20,25 |
| 20 - 40 | € 1,905 | € 19,05 |
| 50 - 90 | € 1,722 | € 17,22 |
| 100 - 240 | € 1,621 | € 16,21 |
| 250+ | € 1,52 | € 15,20 |
Технически документи
Спецификации
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
6.8 A
Maximum Drain Source Voltage
200 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.67mm
Typical Gate Charge @ Vgs
44 nC @ 10 V
Width
9.65mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
4.83mm
Страна на произход
China
Детайли за продукта


