P-Channel MOSFET, 6.8 A, 100 V, 3-Pin D2PAK Infineon IRF9520NSPBF

Номер на артикул на RS: 650-4160Марка: Infineon№ по каталога на производителя: IRF9520NSPBF
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Технически документи

Спецификации

Channel Type

P

Maximum Continuous Drain Current

6.8 A

Maximum Drain Source Voltage

100 V

Package Type

D2PAK

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

480 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

3.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.67mm

Width

9.65mm

Typical Gate Charge @ Vgs

27 nC @ 10 V

Series

HEXFET

Minimum Operating Temperature

-55 °C

Height

4.83mm

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Vishay P-Channel MOSFET, 6.8 A, 200 V, 3-Pin D2PAK IRF9640STRLPBF
€ 2,025Each (In a Pack of 10) (ex VAT)

Запитване за цена

Each (In a Pack of 5) (ex VAT)

P-Channel MOSFET, 6.8 A, 100 V, 3-Pin D2PAK Infineon IRF9520NSPBF
Изберете тип опаковка

Запитване за цена

Each (In a Pack of 5) (ex VAT)

P-Channel MOSFET, 6.8 A, 100 V, 3-Pin D2PAK Infineon IRF9520NSPBF

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от
Vishay P-Channel MOSFET, 6.8 A, 200 V, 3-Pin D2PAK IRF9640STRLPBF
€ 2,025Each (In a Pack of 10) (ex VAT)

Технически документи

Спецификации

Channel Type

P

Maximum Continuous Drain Current

6.8 A

Maximum Drain Source Voltage

100 V

Package Type

D2PAK

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

480 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

3.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.67mm

Width

9.65mm

Typical Gate Charge @ Vgs

27 nC @ 10 V

Series

HEXFET

Minimum Operating Temperature

-55 °C

Height

4.83mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от
Vishay P-Channel MOSFET, 6.8 A, 200 V, 3-Pin D2PAK IRF9640STRLPBF
€ 2,025Each (In a Pack of 10) (ex VAT)