Технически документи
Спецификации
Brand
DiodesZetexTransistor Type
NPN
Maximum DC Collector Current
800 mA
Maximum Collector Emitter Voltage
700 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
800 mW
Transistor Configuration
Single
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
4.7 x 3.7 x 4.7mm
Страна на произход
China
Детайли за продукта
High Voltage Transistors, Diodes Inc
Transistors, Diodes Inc

P.O.A.
Each (On a Reel of 2000) (ex VAT)
2000
P.O.A.
Each (On a Reel of 2000) (ex VAT)
2000
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.

Технически документи
Спецификации
Brand
DiodesZetexTransistor Type
NPN
Maximum DC Collector Current
800 mA
Maximum Collector Emitter Voltage
700 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
800 mW
Transistor Configuration
Single
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
4.7 x 3.7 x 4.7mm
Страна на произход
China
Детайли за продукта
High Voltage Transistors, Diodes Inc
Transistors, Diodes Inc
