Технически документи
Спецификации
Brand
DiodesZetexTransistor Type
NPN
Maximum DC Collector Current
500 mA
Maximum Collector Emitter Voltage
400 V
Package Type
E-Line
Mounting Type
Through Hole
Maximum Power Dissipation
500 mW
Minimum DC Current Gain
50
Transistor Configuration
Single
Maximum Collector Base Voltage
400 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
4.77 x 2.41 x 4.01mm
Maximum Operating Temperature
+200 °C
Страна на произход
China
Детайли за продукта
High Voltage Transistors, Diodes Inc
Transistors, Diodes Inc
P.O.A.
Each (In a Bag of 2000) (ex VAT)
2000
P.O.A.
Each (In a Bag of 2000) (ex VAT)
2000
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
Технически документи
Спецификации
Brand
DiodesZetexTransistor Type
NPN
Maximum DC Collector Current
500 mA
Maximum Collector Emitter Voltage
400 V
Package Type
E-Line
Mounting Type
Through Hole
Maximum Power Dissipation
500 mW
Minimum DC Current Gain
50
Transistor Configuration
Single
Maximum Collector Base Voltage
400 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
4.77 x 2.41 x 4.01mm
Maximum Operating Temperature
+200 °C
Страна на произход
China
Детайли за продукта