Технически документи
Спецификации
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
300 mA
Maximum Collector Emitter Voltage
400 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
625 mW
Minimum DC Current Gain
50
Transistor Configuration
Single
Maximum Collector Base Voltage
500 V
Maximum Emitter Base Voltage
6 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
5.33 x 5.2 x 4.19mm
Maximum Operating Temperature
+150 °C
Детайли за продукта
High Voltage NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
€ 2,16
€ 0,432 Each (In a Pack of 5) (ex VAT)
Стандарт
5
€ 2,16
€ 0,432 Each (In a Pack of 5) (ex VAT)
Стандарт
5
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
количество | Единична цена | Per Опаковка |
---|---|---|
5 - 45 | € 0,432 | € 2,16 |
50 - 95 | € 0,373 | € 1,87 |
100 - 495 | € 0,324 | € 1,62 |
500 - 995 | € 0,284 | € 1,42 |
1000+ | € 0,258 | € 1,29 |
Технически документи
Спецификации
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
300 mA
Maximum Collector Emitter Voltage
400 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
625 mW
Minimum DC Current Gain
50
Transistor Configuration
Single
Maximum Collector Base Voltage
500 V
Maximum Emitter Base Voltage
6 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
5.33 x 5.2 x 4.19mm
Maximum Operating Temperature
+150 °C
Детайли за продукта
High Voltage NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.