Технически документи
Спецификации
Brand
ON SemiconductorTransistor Type
NPN
Maximum DC Collector Current
300 mA
Maximum Collector Emitter Voltage
400 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
625 mW
Maximum Collector Base Voltage
500 V
Maximum Emitter Base Voltage
6 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
5.33 x 5.2 x 4.19mm
Maximum Operating Temperature
+150 °C
Maximum Collector Emitter Saturation Voltage
0.75 V
P.O.A.
1
P.O.A.
1
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
Технически документи
Спецификации
Brand
ON SemiconductorTransistor Type
NPN
Maximum DC Collector Current
300 mA
Maximum Collector Emitter Voltage
400 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
625 mW
Maximum Collector Base Voltage
500 V
Maximum Emitter Base Voltage
6 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
5.33 x 5.2 x 4.19mm
Maximum Operating Temperature
+150 °C
Maximum Collector Emitter Saturation Voltage
0.75 V