Vishay Dual P-Channel MOSFET, 6.5 A, 40 V, 8-Pin SOIC SI4909DY-T1-GE3

Номер на артикул на RS: 818-1302PМарка: Vishay№ по каталога на производителя: SI4909DY-T1-GE3
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Технически документи

Спецификации

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

6.5 A

Maximum Drain Source Voltage

40 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

34 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

3.2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Number of Elements per Chip

2

Length

5mm

Transistor Material

Si

Typical Gate Charge @ Vgs

41.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.55mm

Minimum Operating Temperature

-55 °C

Страна на произход

China

Детайли за продукта

Dual P-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 70,21

€ 0,702 Each (Supplied on a Reel) (ex VAT)

Vishay Dual P-Channel MOSFET, 6.5 A, 40 V, 8-Pin SOIC SI4909DY-T1-GE3
Изберете тип опаковка

€ 70,21

€ 0,702 Each (Supplied on a Reel) (ex VAT)

Vishay Dual P-Channel MOSFET, 6.5 A, 40 V, 8-Pin SOIC SI4909DY-T1-GE3

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

количествоЕдинична ценаPer Ролка
100 - 180€ 0,702€ 14,04
200 - 480€ 0,596€ 11,91
500 - 980€ 0,553€ 11,06
1000+€ 0,529€ 10,58

Ideate. Create. Collaborate

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Технически документи

Спецификации

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

6.5 A

Maximum Drain Source Voltage

40 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

34 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

3.2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Number of Elements per Chip

2

Length

5mm

Transistor Material

Si

Typical Gate Charge @ Vgs

41.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.55mm

Minimum Operating Temperature

-55 °C

Страна на произход

China

Детайли за продукта

Dual P-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more