Технически документи
Спецификации
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
6.5 A
Maximum Drain Source Voltage
40 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
34 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Number of Elements per Chip
2
Length
5mm
Transistor Material
Si
Typical Gate Charge @ Vgs
41.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.55mm
Minimum Operating Temperature
-55 °C
Страна на произход
China
Детайли за продукта
Dual P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 70,21
€ 0,702 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
100
€ 70,21
€ 0,702 Each (Supplied on a Reel) (ex VAT)
Информацията за складовите наличности временно не е налична.
Производствен пакет (Ролка)
100
Информацията за складовите наличности временно не е налична.
количество | Единична цена | Per Ролка |
---|---|---|
100 - 180 | € 0,702 | € 14,04 |
200 - 480 | € 0,596 | € 11,91 |
500 - 980 | € 0,553 | € 11,06 |
1000+ | € 0,529 | € 10,58 |
Технически документи
Спецификации
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
6.5 A
Maximum Drain Source Voltage
40 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
34 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Number of Elements per Chip
2
Length
5mm
Transistor Material
Si
Typical Gate Charge @ Vgs
41.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.55mm
Minimum Operating Temperature
-55 °C
Страна на произход
China
Детайли за продукта