Технически документи
Спецификации
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
1.1 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-323 (SC-70)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.45V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
4.3 nC @ 4.5 V
Width
1.35mm
Transistor Material
Si
Minimum Operating Temperature
-50 °C
Height
1mm
Детайли за продукта
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
Производствен пакет (Ролка)
50
P.O.A.
Производствен пакет (Ролка)
50
Технически документи
Спецификации
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
1.1 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-323 (SC-70)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.45V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
4.3 nC @ 4.5 V
Width
1.35mm
Transistor Material
Si
Minimum Operating Temperature
-50 °C
Height
1mm
Детайли за продукта