Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.4 A
Maximum Drain Source Voltage
1000 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
11 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
54 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Typical Gate Charge @ Vgs
38 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.41mm
Width
4.7mm
Minimum Operating Temperature
-55 °C
Height
9.01mm
Детайли за продукта
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 1,24
Each (Supplied as a Tape) (ex VAT)
Производствен пакет (Лента)
1
€ 1,24
Each (Supplied as a Tape) (ex VAT)
Производствен пакет (Лента)
1
Купете в насипно състояние
количество | Единична цена |
---|---|
1 - 9 | € 1,24 |
10 - 49 | € 1,04 |
50 - 99 | € 0,99 |
100 - 249 | € 0,93 |
250+ | € 0,87 |
Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.4 A
Maximum Drain Source Voltage
1000 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
11 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
54 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Typical Gate Charge @ Vgs
38 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.41mm
Width
4.7mm
Minimum Operating Temperature
-55 °C
Height
9.01mm
Детайли за продукта