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N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-220 Toshiba TK16E60W5,S1VX(S

Номер на артикул на RS: 125-0541Марка: Toshiba№ по каталога на производителя: TK16E60W5,S1VX(S
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Технически документи

Спецификации

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

15.8 A

Maximum Drain Source Voltage

600 V

Series

DTMOSIV

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

230 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

130 W

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.45mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.16mm

Typical Gate Charge @ Vgs

43 nC @ 10 V

Height

15.1mm

Forward Diode Voltage

1.7V

Страна на произход

Japan

Детайли за продукта

MOSFET Transistors, Toshiba

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Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Информацията за складовите наличности временно не е налична.

€ 6,33

€ 1,265 Each (In a Pack of 5) (ex VAT)

N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-220 Toshiba TK16E60W5,S1VX(S

5

Предлагат се на бройка по 5
5€ 6,33
10€ 12,65
15€ 18,98
20€ 25,31
25€ 19,08
30€ 22,89
35€ 26,71
40€ 30,52
45€ 34,34
50€ 34,92
55€ 38,42
60€ 41,91
65€ 45,40
70€ 48,89
75€ 52,38

€ 6,33

€ 1,265 Each (In a Pack of 5) (ex VAT)

N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-220 Toshiba TK16E60W5,S1VX(S
Информацията за складовите наличности временно не е налична.

5

Предлагат се на бройка по 5
5€ 6,33
10€ 12,65
15€ 18,98
20€ 25,31
25€ 19,08
30€ 22,89
35€ 26,71
40€ 30,52
45€ 34,34
50€ 34,92
55€ 38,42
60€ 41,91
65€ 45,40
70€ 48,89
75€ 52,38

Купете в насипно състояние

количествоЕдинична ценаPer Опаковка
5 - 20€ 1,265€ 6,33
25 - 45€ 0,763€ 3,82
50 - 120€ 0,698€ 3,49
125 - 245€ 0,689€ 3,44
250+€ 0,684€ 3,42

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

15.8 A

Maximum Drain Source Voltage

600 V

Series

DTMOSIV

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

230 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

130 W

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.45mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.16mm

Typical Gate Charge @ Vgs

43 nC @ 10 V

Height

15.1mm

Forward Diode Voltage

1.7V

Страна на произход

Japan

Детайли за продукта

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more