Технически документи
Спецификации
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
400 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.75 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
1 W
Maximum Gate Source Voltage
±20 V
Width
1.3mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
0.39 nC @ 4.5 V
Height
0.9mm
Forward Diode Voltage
1.1V
Страна на произход
Thailand
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 0,021
Each (On a Reel of 3000) (ex VAT)
3000
€ 0,021
Each (On a Reel of 3000) (ex VAT)
3000
Купете в насипно състояние
количество | Единична цена | Per Ролка |
---|---|---|
3000 - 3000 | € 0,021 | € 64,38 |
6000 - 6000 | € 0,02 | € 60,80 |
9000+ | € 0,019 | € 57,23 |
Технически документи
Спецификации
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
400 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.75 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
1 W
Maximum Gate Source Voltage
±20 V
Width
1.3mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
0.39 nC @ 4.5 V
Height
0.9mm
Forward Diode Voltage
1.1V
Страна на произход
Thailand