Dual P-Channel MOSFET, 60 A, 30 V, 8-Pin VSON Texas Instruments CSD87334Q3DT
Технически документи
Спецификации
Brand
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
30 V
Series
NexFET
Package Type
VSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
8.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Minimum Gate Threshold Voltage
0.75V
Maximum Power Dissipation
6 W
Transistor Configuration
Dual Base
Maximum Gate Source Voltage
-8 V, +10 V
Width
3.4mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
3.4mm
Typical Gate Charge @ Vgs
10.5 nC
Height
1.05mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Детайли за продукта
Power MOSFET Modules, Texas Instruments
Half-Bridge NexFET Power Block
MOSFET Transistors, Texas Instruments
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
5
P.O.A.
5
Технически документи
Спецификации
Brand
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
30 V
Series
NexFET
Package Type
VSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
8.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Minimum Gate Threshold Voltage
0.75V
Maximum Power Dissipation
6 W
Transistor Configuration
Dual Base
Maximum Gate Source Voltage
-8 V, +10 V
Width
3.4mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
3.4mm
Typical Gate Charge @ Vgs
10.5 nC
Height
1.05mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Детайли за продукта
Power MOSFET Modules, Texas Instruments
Half-Bridge NexFET Power Block