N-Channel MOSFET, 28 A, 600 V, 3-Pin TO-220FP STMicroelectronics STF35N60DM2
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
28 A
Maximum Drain Source Voltage
600 V
Series
MDmesh DM2
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.4mm
Typical Gate Charge @ Vgs
54 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Height
16.4mm
Детайли за продукта
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
High dV/dt capability for improved system reliability
AEC-Q101 qualified
MOSFET Transistors, STMicroelectronics
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Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 5,88
€ 2,942 Each (In a Pack of 2) (ex VAT)
Стандарт
2
€ 5,88
€ 2,942 Each (In a Pack of 2) (ex VAT)
Стандарт
2
Купете в насипно състояние
| количество | Единична цена | Per Опаковка |
|---|---|---|
| 2 - 8 | € 2,942 | € 5,88 |
| 10 - 98 | € 2,87 | € 5,74 |
| 100 - 498 | € 2,793 | € 5,58 |
| 500+ | € 2,721 | € 5,44 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
28 A
Maximum Drain Source Voltage
600 V
Series
MDmesh DM2
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.4mm
Typical Gate Charge @ Vgs
54 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Height
16.4mm
Детайли за продукта
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
High dV/dt capability for improved system reliability
AEC-Q101 qualified
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products