SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 3-Pin HiP247 STMicroelectronics SCTW40N120G2VAG

Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
33 A
Maximum Drain Source Voltage
1200 V
Series
SCT
Package Type
Hip247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.105 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
5V
Number of Elements per Chip
1
Transistor Material
SiC
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 17,05
€ 17,05 Всеки (ex VAT)
Стандарт
1
€ 17,05
€ 17,05 Всеки (ex VAT)
Стандарт
1
Купете в насипно състояние
количество | Единична цена |
---|---|
1 - 4 | € 17,05 |
5 - 9 | € 16,71 |
10+ | € 15,66 |
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
33 A
Maximum Drain Source Voltage
1200 V
Series
SCT
Package Type
Hip247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.105 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
5V
Number of Elements per Chip
1
Transistor Material
SiC