Semikron SKM100GB12F4 Half Bridge IGBT Transistor Module, 100 A 1200 V
Технически документи
Спецификации
Brand
SemikronMaximum Continuous Collector Current
100 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±15.0V
Number of Transistors
2
Configuration
Half Bridge
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P.O.A.
Semikron SKM100GB12F4 Half Bridge IGBT Transistor Module, 100 A 1200 V
8
P.O.A.
Semikron SKM100GB12F4 Half Bridge IGBT Transistor Module, 100 A 1200 V
Информацията за складовите наличности временно не е налична.
8
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Може да се интересувате от
P.O.A.Всеки (ex VAT)
P.O.A.Each (Supplied in a Box) (ex VAT)
Технически документи
Спецификации
Brand
SemikronMaximum Continuous Collector Current
100 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±15.0V
Number of Transistors
2
Configuration
Half Bridge
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Може да се интересувате от
P.O.A.Всеки (ex VAT)
P.O.A.Each (Supplied in a Box) (ex VAT)