Технически документи
Спецификации
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
1.2 to 3mA
Maximum Drain Source Voltage
30 V
Maximum Drain Gate Voltage
-30V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-883
Pin Count
3
Drain Gate On-Capacitance
4pF
Source Gate On-Capacitance
4pF
Dimensions
1.08 x 0.68 x 0.41mm
Length
1.08mm
Height
0.41mm
Maximum Power Dissipation
100 mW
Maximum Operating Temperature
+150 °C
Width
0.68mm
Детайли за продукта
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 0,191
Each (In a Pack of 50) (ex VAT)
50
€ 0,191
Each (In a Pack of 50) (ex VAT)
50
Купете в насипно състояние
количество | Единична цена | Per Опаковка |
---|---|---|
50 - 200 | € 0,191 | € 9,53 |
250 - 950 | € 0,091 | € 4,56 |
1000 - 2450 | € 0,075 | € 3,74 |
2500+ | € 0,074 | € 3,68 |
Технически документи
Спецификации
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
1.2 to 3mA
Maximum Drain Source Voltage
30 V
Maximum Drain Gate Voltage
-30V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-883
Pin Count
3
Drain Gate On-Capacitance
4pF
Source Gate On-Capacitance
4pF
Dimensions
1.08 x 0.68 x 0.41mm
Length
1.08mm
Height
0.41mm
Maximum Power Dissipation
100 mW
Maximum Operating Temperature
+150 °C
Width
0.68mm
Детайли за продукта
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.