SiC N-Channel MOSFET Transistor, 17 A, 1200 V, 4-Pin TO-247-4 onsemi NVHL160N120SC1

Номер на артикул на RS: 202-5746Марка: onsemi№ по каталога на производителя: NVHL160N120SC1
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Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

1200 V

Series

NVH

Package Type

TO-247-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

0.16 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.3V

Number of Elements per Chip

1

Transistor Material

SiC

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Информацията за складовите наличности временно не е налична.

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Информацията за складовите наличности временно не е налична.

€ 6,195

Each (In a Tube of 450) (ex VAT)

SiC N-Channel MOSFET Transistor, 17 A, 1200 V, 4-Pin TO-247-4 onsemi NVHL160N120SC1

€ 6,195

Each (In a Tube of 450) (ex VAT)

SiC N-Channel MOSFET Transistor, 17 A, 1200 V, 4-Pin TO-247-4 onsemi NVHL160N120SC1
Информацията за складовите наличности временно не е налична.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

1200 V

Series

NVH

Package Type

TO-247-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

0.16 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.3V

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more