N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-247 onsemi NTHL082N65S3F

Номер на артикул на RS: 172-8980Марка: onsemi№ по каталога на производителя: NTHL082N65S3F
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Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

82 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

313 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

4.82mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

15.87mm

Typical Gate Charge @ Vgs

81 nC @ 10 V

Height

20.82mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

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Информацията за складовите наличности временно не е налична.

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€ 9,411

Each (In a Pack of 5) (ex VAT)

N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-247 onsemi NTHL082N65S3F
Изберете тип опаковка

€ 9,411

Each (In a Pack of 5) (ex VAT)

N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-247 onsemi NTHL082N65S3F
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Купете в насипно състояние

количествоЕдинична ценаPer Опаковка
5 - 5€ 9,411€ 47,06
10 - 95€ 8,43€ 42,15
100 - 245€ 8,21€ 41,05
250 - 495€ 8,001€ 40,00
500+€ 7,799€ 39,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

82 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

313 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

4.82mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

15.87mm

Typical Gate Charge @ Vgs

81 nC @ 10 V

Height

20.82mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more