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N-Channel MOSFET, 170 mA, 100 V, 3-Pin SOT-23 onsemi BSS123LT1G

Номер на артикул на RS: 545-0135PМарка: onsemi№ по каталога на производителя: BSS123LT1G
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Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

170 mA

Maximum Drain Source Voltage

100 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

6 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.8V

Maximum Power Dissipation

225 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2.9mm

Width

1.3mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

0.94mm

Детайли за продукта

N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 0,225

Each (Supplied on a Reel) (ex VAT)

N-Channel MOSFET, 170 mA, 100 V, 3-Pin SOT-23 onsemi BSS123LT1G
Изберете тип опаковка

€ 0,225

Each (Supplied on a Reel) (ex VAT)

N-Channel MOSFET, 170 mA, 100 V, 3-Pin SOT-23 onsemi BSS123LT1G
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Купете в насипно състояние

количествоЕдинична ценаPer Ролка
10 - 90€ 0,225€ 2,25
100 - 240€ 0,194€ 1,94
250 - 490€ 0,168€ 1,68
500 - 990€ 0,148€ 1,48
1000+€ 0,135€ 1,35

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от

Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

170 mA

Maximum Drain Source Voltage

100 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

6 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.8V

Maximum Power Dissipation

225 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2.9mm

Width

1.3mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

0.94mm

Детайли за продукта

N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от