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P-Channel MOSFET, 100 A, 75 V, 3-Pin D2PAK onsemi SMP3003-DL-1E

Номер на артикул на RS: 805-4389Марка: ON Semiconductor№ по каталога на производителя: SMP3003-DL-1E
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Технически документи

Спецификации

Channel Type

P

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

75 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

11 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.6V

Maximum Power Dissipation

90 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10mm

Typical Gate Charge @ Vgs

280 nC @ 10 V

Width

9.2mm

Transistor Material

Si

Height

4.5mm

Детайли за продукта

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Информацията за складовите наличности временно не е налична.

P.O.A.

Each (In a Pack of 2) (ex VAT)

P-Channel MOSFET, 100 A, 75 V, 3-Pin D2PAK onsemi SMP3003-DL-1E
Изберете тип опаковка

P.O.A.

Each (In a Pack of 2) (ex VAT)

P-Channel MOSFET, 100 A, 75 V, 3-Pin D2PAK onsemi SMP3003-DL-1E
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

P

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

75 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

11 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.6V

Maximum Power Dissipation

90 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10mm

Typical Gate Charge @ Vgs

280 nC @ 10 V

Width

9.2mm

Transistor Material

Si

Height

4.5mm

Детайли за продукта

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more