Технически документи
Спецификации
Brand
ON SemiconductorChannel Type
N
Idss Drain-Source Cut-off Current
25 → 75mA
Maximum Drain Source Voltage
30 V
Maximum Gate Source Voltage
+30 V
Maximum Drain Gate Voltage
30V
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
60 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.9 x 1.3 x 0.94mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
2.9mm
Width
1.3mm
Height
0.94mm
Детайли за продукта
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
10
P.O.A.
10
Технически документи
Спецификации
Brand
ON SemiconductorChannel Type
N
Idss Drain-Source Cut-off Current
25 → 75mA
Maximum Drain Source Voltage
30 V
Maximum Gate Source Voltage
+30 V
Maximum Drain Gate Voltage
30V
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
60 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.9 x 1.3 x 0.94mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
2.9mm
Width
1.3mm
Height
0.94mm
Детайли за продукта
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.