Технически документи
Спецификации
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
580 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
26 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Length
10.71mm
Typical Gate Charge @ Vgs
18 nC @ 10 V
Width
4.93mm
Transistor Material
Si
Number of Elements per Chip
1
Forward Diode Voltage
1.4V
Height
16.13mm
Minimum Operating Temperature
-55 °C
Страна на произход
China
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
10
P.O.A.
10
Технически документи
Спецификации
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
580 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
26 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Length
10.71mm
Typical Gate Charge @ Vgs
18 nC @ 10 V
Width
4.93mm
Transistor Material
Si
Number of Elements per Chip
1
Forward Diode Voltage
1.4V
Height
16.13mm
Minimum Operating Temperature
-55 °C
Страна на произход
China