N-Channel MOSFET, 66 A, 850 V, 3-Pin PLUS247 IXYS IXFX66N85X
Технически документи
Спецификации
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
66 A
Maximum Drain Source Voltage
850 V
Series
HiperFET
Package Type
PLUS247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
1.25 kW
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
5.21mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
16.13mm
Typical Gate Charge @ Vgs
230 nC @ 10 V
Height
21.34mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
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Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
30
P.O.A.
30
Ideate. Create. Collaborate
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Технически документи
Спецификации
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
66 A
Maximum Drain Source Voltage
850 V
Series
HiperFET
Package Type
PLUS247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
1.25 kW
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
5.21mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
16.13mm
Typical Gate Charge @ Vgs
230 nC @ 10 V
Height
21.34mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products