P-Channel MOSFET, 8.8 A, 60 V, 3-Pin DPAK Infineon SPD08P06PGBTMA1
Технически документи
Спецификации
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
8.8 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Typical Gate Charge @ Vgs
10 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Width
6.22mm
Series
SIPMOS
Minimum Operating Temperature
-55 °C
Height
2.41mm
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Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
Стандарт
5
P.O.A.
Стандарт
5
Ideate. Create. Collaborate
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Технически документи
Спецификации
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
8.8 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Typical Gate Charge @ Vgs
10 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Width
6.22mm
Series
SIPMOS
Minimum Operating Temperature
-55 °C
Height
2.41mm
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products