Infineon HEXFET N-Channel MOSFET, 5 A, 30 V, 3-Pin SOT-23 IRLML6344TRPBF

Номер на артикул на RS: 737-7225Марка: Infineon№ по каталога на производителя: IRLML6344TRPBFDistrelec Article No.: 30284105
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Технически документи

Спецификации

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

30 V

Series

HEXFET

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

37 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

0.5V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Typical Gate Charge @ Vgs

6.8 nC @ 4.5 V

Width

1.4mm

Number of Elements per Chip

1

Length

3.04mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.02mm

Детайли за продукта

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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€ 4,39

€ 0,22 Each (In a Pack of 20) (ex VAT)

Infineon HEXFET N-Channel MOSFET, 5 A, 30 V, 3-Pin SOT-23 IRLML6344TRPBF
Изберете тип опаковка

Стандарт

Изберете тип опаковка

Стандарт - each

Предлагат се на бройка по 20.

Производство -

Предлагат се на бройка по 20.

Препоръчва се за поръчки в големи количества. Артикулите са опаковани готови за поставяне в машини, което Ви позволява да подобрите ефективността на производството.

20

Предлагат се на бройка по 20
20€ 4,39
40€ 8,79
60€ 13,18
80€ 17,57
100€ 21,96
120€ 26,36
140€ 30,75
160€ 35,14
180€ 39,54
200€ 29,82
220€ 32,81
240€ 35,79
260€ 38,77
280€ 41,75
300€ 44,74

€ 4,39

€ 0,22 Each (In a Pack of 20) (ex VAT)

Infineon HEXFET N-Channel MOSFET, 5 A, 30 V, 3-Pin SOT-23 IRLML6344TRPBF

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

Стандарт

Изберете тип опаковка

Стандарт - each

Предлагат се на бройка по 20.

Производство -

Предлагат се на бройка по 20.

Препоръчва се за поръчки в големи количества. Артикулите са опаковани готови за поставяне в машини, което Ви позволява да подобрите ефективността на производството.

20

Предлагат се на бройка по 20
20€ 4,39
40€ 8,79
60€ 13,18
80€ 17,57
100€ 21,96
120€ 26,36
140€ 30,75
160€ 35,14
180€ 39,54
200€ 29,82
220€ 32,81
240€ 35,79
260€ 38,77
280€ 41,75
300€ 44,74

Информацията за складовите наличности временно не е налична.

количествоЕдинична ценаPer Опаковка
20 - 180€ 0,22€ 4,39
200 - 480€ 0,149€ 2,98
500 - 980€ 0,14€ 2,80
1000 - 1980€ 0,132€ 2,64
2000+€ 0,121€ 2,43

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

30 V

Series

HEXFET

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

37 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

0.5V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Typical Gate Charge @ Vgs

6.8 nC @ 4.5 V

Width

1.4mm

Number of Elements per Chip

1

Length

3.04mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.02mm

Детайли за продукта

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more