Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
72 A
Maximum Drain Source Voltage
100 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
15.9mm
Typical Gate Charge @ Vgs
110 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
5.3mm
Number of Elements per Chip
1
Transistor Material
Si
Height
20.3mm
Series
HEXFET
Minimum Operating Temperature
-55 °C
Страна на произход
Mexico
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
50
P.O.A.
50
Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
72 A
Maximum Drain Source Voltage
100 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
15.9mm
Typical Gate Charge @ Vgs
110 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
5.3mm
Number of Elements per Chip
1
Transistor Material
Si
Height
20.3mm
Series
HEXFET
Minimum Operating Temperature
-55 °C
Страна на произход
Mexico