Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
59 A
Maximum Drain Source Voltage
30 V
Package Type
D2PAK
Mounting Type
Surface Mount
Pin Count
2 + Tab
Maximum Drain Source Resistance
12.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.25V
Minimum Gate Threshold Voltage
1.35V
Maximum Power Dissipation
57 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
9.65mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
9.7 nC @ 4.5 V
Height
4.83mm
Series
IRF3707ZS
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
Стандарт
10
P.O.A.
Стандарт
10
Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
59 A
Maximum Drain Source Voltage
30 V
Package Type
D2PAK
Mounting Type
Surface Mount
Pin Count
2 + Tab
Maximum Drain Source Resistance
12.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.25V
Minimum Gate Threshold Voltage
1.35V
Maximum Power Dissipation
57 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
9.65mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
9.7 nC @ 4.5 V
Height
4.83mm
Series
IRF3707ZS
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V