N-Channel MOSFET, 4 A, 800 V, 3 + Tab-Pin TO-220FP Infineon IPA80R1K4P7XKSA1
Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
800 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3 + Tab
Maximum Drain Source Resistance
3.1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
24 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+30 V
Length
10.65mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Width
4.9mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
16.15mm
Series
CoolMOS P7
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.9V
Страна на произход
China
Детайли за продукта
Infineon CoolMOS™P7 Power MOSFET
The 800V CoolMOS P7 Power MOSFET family establishes even higher efficiency and thermal performance. Suitable applications are power adapters, LED lighting, audio, industrial and auxiliary power.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
5
P.O.A.
5
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
800 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3 + Tab
Maximum Drain Source Resistance
3.1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
24 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+30 V
Length
10.65mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Width
4.9mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
16.15mm
Series
CoolMOS P7
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.9V
Страна на произход
China
Детайли за продукта
Infineon CoolMOS™P7 Power MOSFET
The 800V CoolMOS P7 Power MOSFET family establishes even higher efficiency and thermal performance. Suitable applications are power adapters, LED lighting, audio, industrial and auxiliary power.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products