Fairchild ISL9V3040S3ST IGBT, 21 A 450 V, 3-Pin D2PAK (TO-263), Surface Mount
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Технически документи
Спецификации
Maximum Continuous Collector Current
21 A
Maximum Collector Emitter Voltage
450 V
Maximum Gate Emitter Voltage
±14V
Maximum Power Dissipation
150 W
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
10.67 x 9.65 x 4.83mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Детайли за продукта
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 2,598
Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
5
€ 2,598
Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
5
Купете в насипно състояние
количество | Единична цена | Per Ролка |
---|---|---|
5 - 5 | € 2,598 | € 12,99 |
10 - 95 | € 2,223 | € 11,11 |
100 - 245 | € 1,725 | € 8,62 |
250 - 495 | € 1,662 | € 8,31 |
500+ | € 1,528 | € 7,64 |
Технически документи
Спецификации
Maximum Continuous Collector Current
21 A
Maximum Collector Emitter Voltage
450 V
Maximum Gate Emitter Voltage
±14V
Maximum Power Dissipation
150 W
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
10.67 x 9.65 x 4.83mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Детайли за продукта
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.