Cypress Semiconductor SRAM, CY14B104NA-ZS25XI- 4Mbit
Технически документи
Спецификации
Memory Size
4Mbit
Organisation
256K x 16 bit, 512K x 8 bit
Number of Words
256 k, 512k
Number of Bits per Word
8 bit, 16bit
Maximum Random Access Time
25ns
Address Bus Width
8 bit, 16 bit
Low Power
Yes
Mounting Type
Surface Mount
Package Type
TSOP
Pin Count
44
Dimensions
18.517 x 10.262 x 1.044mm
Maximum Operating Supply Voltage
3.6 V
Height
1.044mm
Minimum Operating Supply Voltage
2.7 V
Maximum Operating Temperature
+85 °C
Length
18.517mm
Minimum Operating Temperature
-40 °C
Width
10.262mm
Детайли за продукта
Non-Volatile RAM, Cypress Semiconductor
Non-Volatile RAM (NVRAM)
NVRAMs are modules containing a CMOS static RAM and a non-rechargeable Lithium battery to maintain the data when the power supply is removed. Some devices in the range also incorporate a real-time clock (RTC).
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
1
P.O.A.
1
Технически документи
Спецификации
Memory Size
4Mbit
Organisation
256K x 16 bit, 512K x 8 bit
Number of Words
256 k, 512k
Number of Bits per Word
8 bit, 16bit
Maximum Random Access Time
25ns
Address Bus Width
8 bit, 16 bit
Low Power
Yes
Mounting Type
Surface Mount
Package Type
TSOP
Pin Count
44
Dimensions
18.517 x 10.262 x 1.044mm
Maximum Operating Supply Voltage
3.6 V
Height
1.044mm
Minimum Operating Supply Voltage
2.7 V
Maximum Operating Temperature
+85 °C
Length
18.517mm
Minimum Operating Temperature
-40 °C
Width
10.262mm
Детайли за продукта
Non-Volatile RAM, Cypress Semiconductor
Non-Volatile RAM (NVRAM)
NVRAMs are modules containing a CMOS static RAM and a non-rechargeable Lithium battery to maintain the data when the power supply is removed. Some devices in the range also incorporate a real-time clock (RTC).