BALLUFF Inductive Barrel-Style Proximity Sensor, M8 x 1, 1.5 mm Detection, PNP Output, 12 → 30 V dc, IP67
Технически документи
Спецификации
Body Style
Barrel
Reverse Polarity Protection
Yes
Short Circuit Overload Protection
Yes
For Use With HMI
X2
Shielding
Shielded
Maximum Switching Frequency
1kHz
Thread Size
M8 x 1
Maximum dc Voltage
30V
Minimum Operating Temperature
-25°C
Maximum Operating Temperature
+70°C
IP Rating
IP67
Mounting Type
Flush
Housing Material
CuZn
Switching Current
200 mA
Detection Range
1.5 mm
Brand
BALLUFFOutput Type
PNP
Terminal Type
3-Pin M8 Connector
Length
60mm
Supply Voltage
12 → 30 V dc
Страна на произход
Hungary
Детайли за продукта
Co-Pack IGBT up to 20A, Infineon
Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.
IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.
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€ 44,99
Всеки (ex VAT)
1
€ 44,99
Всеки (ex VAT)
1
Купете в насипно състояние
| количество | Единична цена |
|---|---|
| 1 - 2 | € 44,99 |
| 3+ | € 43,17 |
Технически документи
Спецификации
Body Style
Barrel
Reverse Polarity Protection
Yes
Short Circuit Overload Protection
Yes
For Use With HMI
X2
Shielding
Shielded
Maximum Switching Frequency
1kHz
Thread Size
M8 x 1
Maximum dc Voltage
30V
Minimum Operating Temperature
-25°C
Maximum Operating Temperature
+70°C
IP Rating
IP67
Mounting Type
Flush
Housing Material
CuZn
Switching Current
200 mA
Detection Range
1.5 mm
Brand
BALLUFFOutput Type
PNP
Terminal Type
3-Pin M8 Connector
Length
60mm
Supply Voltage
12 → 30 V dc
Страна на произход
Hungary
Детайли за продукта
Co-Pack IGBT up to 20A, Infineon
Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.
IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.