Вземете 7 % отстъпка за всички онлайн поръчки след регистрация с RS.

регистрирайте се сега

Wolfspeed SiC MOSFET, 1200 V CAB450M12XM3

Номер на артикул на RS: 192-3386Марка: Wolfspeed№ по каталога на производителя: CAB450M12XM3
brand-logo
Преглед на всички в MOSFETs

Технически документи

Спецификации

Maximum Drain Source Voltage

1200 V

Maximum Drain Source Resistance

4.6 mΩ

Maximum Gate Threshold Voltage

3.6V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

50 mW

Maximum Gate Source Voltage

-4 V, 19 V

Number of Elements per Chip

1

Width

53mm

Length

80mm

Typical Gate Charge @ Vgs

1330 nC @ 4/15V

Transistor Material

SiC

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-40 °C

Height

15.75mm

Страна на произход

United States

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Информацията за складовите наличности временно не е налична.

€ 929,22

€ 929,22 Всеки (ex VAT)

Wolfspeed SiC MOSFET, 1200 V CAB450M12XM3

€ 929,22

€ 929,22 Всеки (ex VAT)

Wolfspeed SiC MOSFET, 1200 V CAB450M12XM3
Информацията за складовите наличности временно не е налична.

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Maximum Drain Source Voltage

1200 V

Maximum Drain Source Resistance

4.6 mΩ

Maximum Gate Threshold Voltage

3.6V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

50 mW

Maximum Gate Source Voltage

-4 V, 19 V

Number of Elements per Chip

1

Width

53mm

Length

80mm

Typical Gate Charge @ Vgs

1330 nC @ 4/15V

Transistor Material

SiC

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-40 °C

Height

15.75mm

Страна на произход

United States

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more