SiC N-Channel MOSFET, 11 A, 900 V, 7-Pin D2PAK Wolfspeed C3M0280090J
Технически документи
Спецификации
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
900 V
Package Type
TO-263-7
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, 18 V
Typical Gate Charge @ Vgs
9.5 nC @ 4/15V
Width
9.12mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
SiC
Length
10.23mm
Height
4.57mm
Minimum Operating Temperature
-55 °C
Страна на произход
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 4,979
Each (In a Pack of 2) (ex VAT)
2
€ 4,979
Each (In a Pack of 2) (ex VAT)
2
Купете в насипно състояние
| количество | Единична цена | Per Опаковка |
|---|---|---|
| 2 - 18 | € 4,979 | € 9,96 |
| 20+ | € 4,816 | € 9,63 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
900 V
Package Type
TO-263-7
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, 18 V
Typical Gate Charge @ Vgs
9.5 nC @ 4/15V
Width
9.12mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
SiC
Length
10.23mm
Height
4.57mm
Minimum Operating Temperature
-55 °C
Страна на произход
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products