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Wolfspeed SiC N-Channel MOSFET, 63 A, 1200 V, 4-Pin TO-247-4 C3M0032120K

Номер на артикул на RS: 192-3498Марка: Wolfspeed№ по каталога на производителя: C3M0032120K
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

63 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-247-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

32 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.6V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

283 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, 19 V

Number of Elements per Chip

1

Width

5.21mm

Length

16.13mm

Typical Gate Charge @ Vgs

118 nC @ 4/15V

Transistor Material

SiC

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-40 °C

Height

23.6mm

Страна на произход

China

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Информацията за складовите наличности временно не е налична.

€ 29,44

€ 29,44 Всеки (ex VAT)

Wolfspeed SiC N-Channel MOSFET, 63 A, 1200 V, 4-Pin TO-247-4 C3M0032120K

€ 29,44

€ 29,44 Всеки (ex VAT)

Wolfspeed SiC N-Channel MOSFET, 63 A, 1200 V, 4-Pin TO-247-4 C3M0032120K
Информацията за складовите наличности временно не е налична.

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

количествоЕдинична цена
1 - 9€ 29,44
10+€ 28,91

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

63 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-247-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

32 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.6V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

283 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, 19 V

Number of Elements per Chip

1

Width

5.21mm

Length

16.13mm

Typical Gate Charge @ Vgs

118 nC @ 4/15V

Transistor Material

SiC

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-40 °C

Height

23.6mm

Страна на произход

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more