Технически документи
Спецификации
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
5.3 A
Maximum Drain Source Voltage
1700 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
78 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +25 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.23mm
Typical Gate Charge @ Vgs
13 nC @ 20 V
Width
10.99mm
Transistor Material
SiC
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
3.8V
Height
4.57mm
Страна на произход
China
Детайли за продукта
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
Enhancement-mode N-channel SiC technology
High Drain-Source breakdown voltages - up to 1200V
Multiple devices are easy to parallel and simple to drive
High speed switching with low on-resistance
Latch-up resistant operation
MOSFET Transistors, Wolfspeed
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 7,654
Each (In a Pack of 2) (ex VAT)
2
€ 7,654
Each (In a Pack of 2) (ex VAT)
2
Купете в насипно състояние
количество | Единична цена | Per Опаковка |
---|---|---|
2 - 8 | € 7,654 | € 15,31 |
10 - 18 | € 7,181 | € 14,36 |
20 - 48 | € 7,005 | € 14,01 |
50 - 98 | € 6,818 | € 13,64 |
100+ | € 6,625 | € 13,25 |
Технически документи
Спецификации
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
5.3 A
Maximum Drain Source Voltage
1700 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
78 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +25 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.23mm
Typical Gate Charge @ Vgs
13 nC @ 20 V
Width
10.99mm
Transistor Material
SiC
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
3.8V
Height
4.57mm
Страна на произход
China
Детайли за продукта
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
Enhancement-mode N-channel SiC technology
High Drain-Source breakdown voltages - up to 1200V
Multiple devices are easy to parallel and simple to drive
High speed switching with low on-resistance
Latch-up resistant operation