Vishay 50V 4A, Schottky Diode, 2-Pin DO-221BC V4PAN50-M3/I

Номер на артикул на RS: 830-6218PМарка: Vishay№ по каталога на производителя: V4PAN50-M3/I
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Технически документи

Спецификации

Brand

Vishay

Mounting Type

Surface Mount

Package Type

DO-221BC

Maximum Continuous Forward Current

4A

Peak Reverse Repetitive Voltage

50V

Diode Configuration

Single

Rectifier Type

Schottky Rectifier

Diode Type

Schottky

Pin Count

2

Maximum Forward Voltage Drop

590mV

Number of Elements per Chip

1

Diode Technology

Schottky Barrier

Peak Non-Repetitive Forward Surge Current

80A

Страна на произход

China

Детайли за продукта

TMBS - Trench MOS Barrier Schottky Rectifiers, Up to 20A, Vishay Semiconductor

The Trench MOS Barrier Schottky (TMBS) Rectifier Series by Vishay contain a patented trench structure. TMBS rectifiers offer several advantages over planar Schottky rectifiers. At operating voltages of 45V and above planar Schottky rectifiers can lose their advantage of fast switching speeds and low forward drop to a significant degree. The patented TMBS structure addresses these issues by diminishing minority carrier injections to the drift region, therefore minimising stored charges and improving switching speeds.

Features

Patented Trench Structure
Improved efficiency in AC/DC Switched mode-power supplies and DC/DC converters
High power density and low forward voltage

Schottky Rectifiers, Vishay Semiconductor

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Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Информацията за складовите наличности временно не е налична.

€ 0,134

Each (Supplied on a Reel) (ex VAT)

Vishay 50V 4A, Schottky Diode, 2-Pin DO-221BC V4PAN50-M3/I
Изберете тип опаковка

Изберете тип опаковка

Стандарт - each

Предлагат се на бройка по 40.

Производство -

Предлагат се на бройка по 40.

Препоръчва се за поръчки в големи количества. Артикулите са опаковани готови за поставяне в машини, което Ви позволява да подобрите ефективността на производството.

40

Предлагат се на бройка по 40
40€ 5,38
80€ 10,76
120€ 16,14
160€ 21,52
200€ 26,90
240€ 32,28
280€ 37,66
320€ 43,04
360€ 48,42
400€ 53,80
440€ 59,18
480€ 64,56
520€ 69,94
560€ 75,32
600€ 80,70

€ 0,134

Each (Supplied on a Reel) (ex VAT)

Vishay 50V 4A, Schottky Diode, 2-Pin DO-221BC V4PAN50-M3/I
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Изберете тип опаковка

Стандарт - each

Предлагат се на бройка по 40.

Производство -

Предлагат се на бройка по 40.

Препоръчва се за поръчки в големи количества. Артикулите са опаковани готови за поставяне в машини, което Ви позволява да подобрите ефективността на производството.

40

Предлагат се на бройка по 40
40€ 5,38
80€ 10,76
120€ 16,14
160€ 21,52
200€ 26,90
240€ 32,28
280€ 37,66
320€ 43,04
360€ 48,42
400€ 53,80
440€ 59,18
480€ 64,56
520€ 69,94
560€ 75,32
600€ 80,70

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Vishay

Mounting Type

Surface Mount

Package Type

DO-221BC

Maximum Continuous Forward Current

4A

Peak Reverse Repetitive Voltage

50V

Diode Configuration

Single

Rectifier Type

Schottky Rectifier

Diode Type

Schottky

Pin Count

2

Maximum Forward Voltage Drop

590mV

Number of Elements per Chip

1

Diode Technology

Schottky Barrier

Peak Non-Repetitive Forward Surge Current

80A

Страна на произход

China

Детайли за продукта

TMBS - Trench MOS Barrier Schottky Rectifiers, Up to 20A, Vishay Semiconductor

The Trench MOS Barrier Schottky (TMBS) Rectifier Series by Vishay contain a patented trench structure. TMBS rectifiers offer several advantages over planar Schottky rectifiers. At operating voltages of 45V and above planar Schottky rectifiers can lose their advantage of fast switching speeds and low forward drop to a significant degree. The patented TMBS structure addresses these issues by diminishing minority carrier injections to the drift region, therefore minimising stored charges and improving switching speeds.

Features

Patented Trench Structure
Improved efficiency in AC/DC Switched mode-power supplies and DC/DC converters
High power density and low forward voltage

Schottky Rectifiers, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more