Vishay N-Channel MOSFET, 150 A, 80 V, 3-Pin TO-220AB SUP60020E-GE3
Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
150 A
Maximum Drain Source Voltage
80 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
4.65mm
Length
10.51mm
Typical Gate Charge @ Vgs
151.2 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Height
9.01mm
Страна на произход
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 128,88
€ 2,578 Each (Supplied in a Tube) (ex VAT)
Производствен пакет (Тръба)
50
€ 128,88
€ 2,578 Each (Supplied in a Tube) (ex VAT)
Информацията за складовите наличности временно не е налична.
Производствен пакет (Тръба)
50
Информацията за складовите наличности временно не е налична.
| количество | Единична цена | Per Тръба |
|---|---|---|
| 50 - 120 | € 2,578 | € 12,89 |
| 125 - 245 | € 2,432 | € 12,16 |
| 250 - 495 | € 2,291 | € 11,46 |
| 500+ | € 2,148 | € 10,74 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
150 A
Maximum Drain Source Voltage
80 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
4.65mm
Length
10.51mm
Typical Gate Charge @ Vgs
151.2 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Height
9.01mm
Страна на произход
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products