Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.65mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
126 nC @ 10 V
Length
10.51mm
Height
15.49mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Детайли за продукта
N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 2,912
Each (In a Pack of 2) (ex VAT)
2
€ 2,912
Each (In a Pack of 2) (ex VAT)
2
Купете в насипно състояние
количество | Единична цена | Per Опаковка |
---|---|---|
2 - 18 | € 2,912 | € 5,82 |
20 - 98 | € 2,737 | € 5,47 |
100 - 198 | € 2,473 | € 4,95 |
200 - 498 | € 2,327 | € 4,66 |
500+ | € 2,187 | € 4,37 |
Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.65mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
126 nC @ 10 V
Length
10.51mm
Height
15.49mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Детайли за продукта