P-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK Vishay SUD50P06-15-GE3

Номер на артикул на RS: 152-6380Марка: Vishay№ по каталога на производителя: SUD50P06-15-GE3
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Технически документи

Спецификации

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

60 V

Package Type

TO-252AA

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

28 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

-3V

Minimum Gate Threshold Voltage

-1V

Maximum Power Dissipation

113 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

6.22mm

Maximum Operating Temperature

+150 °C

Length

6.73mm

Typical Gate Charge @ Vgs

110 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

2.38mm

Forward Diode Voltage

-1.6V

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€ 2,632

Each (In a Pack of 5) (ex VAT)

P-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK Vishay SUD50P06-15-GE3
Изберете тип опаковка

€ 2,632

Each (In a Pack of 5) (ex VAT)

P-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK Vishay SUD50P06-15-GE3
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Купете в насипно състояние

количествоЕдинична ценаPer Опаковка
5 - 45€ 2,632€ 13,16
50 - 120€ 2,368€ 11,84
125 - 245€ 2,237€ 11,18
250 - 495€ 1,975€ 9,88
500+€ 1,842€ 9,21

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

60 V

Package Type

TO-252AA

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

28 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

-3V

Minimum Gate Threshold Voltage

-1V

Maximum Power Dissipation

113 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

6.22mm

Maximum Operating Temperature

+150 °C

Length

6.73mm

Typical Gate Charge @ Vgs

110 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

2.38mm

Forward Diode Voltage

-1.6V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more