P-Channel MOSFET, 3 A, 12 V, 3-Pin SOT-23 Vishay SQ2315ES-T1_GE3

Номер на артикул на RS: 819-3901Марка: Vishay№ по каталога на производителя: SQ2315ES-T1_GE3
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Технически документи

Спецификации

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

12 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

92 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.45V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

3.04mm

Typical Gate Charge @ Vgs

8.4 nC @ 4.5 V

Series

SQ Rugged

Minimum Operating Temperature

-55 °C

Height

1.02mm

Страна на произход

China

Детайли за продукта

P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 0,511

Each (In a Pack of 20) (ex VAT)

P-Channel MOSFET, 3 A, 12 V, 3-Pin SOT-23 Vishay SQ2315ES-T1_GE3
Изберете тип опаковка

€ 0,511

Each (In a Pack of 20) (ex VAT)

P-Channel MOSFET, 3 A, 12 V, 3-Pin SOT-23 Vishay SQ2315ES-T1_GE3
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Купете в насипно състояние

количествоЕдинична ценаPer Опаковка
20 - 180€ 0,511€ 10,22
200 - 480€ 0,409€ 8,19
500 - 980€ 0,332€ 6,64
1000 - 1980€ 0,256€ 5,12
2000+€ 0,205€ 4,09

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

12 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

92 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.45V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

3.04mm

Typical Gate Charge @ Vgs

8.4 nC @ 4.5 V

Series

SQ Rugged

Minimum Operating Temperature

-55 °C

Height

1.02mm

Страна на произход

China

Детайли за продукта

P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more