N-Channel MOSFET, 30 A, 80 V, 8-Pin PowerPAK 1212-8 Vishay SIS468DN-T1-GE3
Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
80 V
Series
ThunderFET
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
32 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
52 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.4mm
Typical Gate Charge @ Vgs
18.1 nC @ 10 V
Width
3.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.12mm
Детайли за продукта
N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 6,10
€ 1,22 Each (Supplied as a Tape) (ex VAT)
Стандарт
5
€ 6,10
€ 1,22 Each (Supplied as a Tape) (ex VAT)
Стандарт
5
Купете в насипно състояние
| количество | Единична цена | Per Лента |
|---|---|---|
| 5 - 45 | € 1,22 | € 6,10 |
| 50 - 245 | € 1,096 | € 5,48 |
| 250 - 495 | € 1,036 | € 5,18 |
| 500 - 1245 | € 0,792 | € 3,96 |
| 1250+ | € 0,708 | € 3,54 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
80 V
Series
ThunderFET
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
32 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
52 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.4mm
Typical Gate Charge @ Vgs
18.1 nC @ 10 V
Width
3.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.12mm
Детайли за продукта
N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products