P-Channel MOSFET, 22 A, 20 V, 8-Pin PowerPAK 1212-8 Vishay SIS415DNT-T1-GE3

Номер на артикул на RS: 814-1304PМарка: Vishay№ по каталога на производителя: SIS415DNT-T1-GE3
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Технически документи

Спецификации

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

22 A

Maximum Drain Source Voltage

20 V

Package Type

PowerPAK 1212-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9.5 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

52 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Width

3.4mm

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.4mm

Typical Gate Charge @ Vgs

117 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

0.8mm

Детайли за продукта

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 0,211

Each (Supplied on a Reel) (ex VAT)

P-Channel MOSFET, 22 A, 20 V, 8-Pin PowerPAK 1212-8 Vishay SIS415DNT-T1-GE3
Изберете тип опаковка

€ 0,211

Each (Supplied on a Reel) (ex VAT)

P-Channel MOSFET, 22 A, 20 V, 8-Pin PowerPAK 1212-8 Vishay SIS415DNT-T1-GE3
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

22 A

Maximum Drain Source Voltage

20 V

Package Type

PowerPAK 1212-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9.5 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

52 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Width

3.4mm

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.4mm

Typical Gate Charge @ Vgs

117 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

0.8mm

Детайли за продукта

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more