Vishay TrenchFET N-Channel MOSFET, 100 A, 30 V, 8-Pin PowerPAK SO-8 SIRA00DP-T1-GE3
Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Series
TrenchFET
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1.35 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
6.25mm
Typical Gate Charge @ Vgs
147 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.26mm
Minimum Operating Temperature
-55 °C
Height
1.12mm
Детайли за продукта
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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€ 115,05
€ 2,301 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
50
€ 115,05
€ 2,301 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
50
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
| количество | Единична цена | Per Ролка |
|---|---|---|
| 50 - 120 | € 2,301 | € 11,50 |
| 125 - 245 | € 2,082 | € 10,41 |
| 250 - 495 | € 1,959 | € 9,79 |
| 500+ | € 1,837 | € 9,19 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Series
TrenchFET
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1.35 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
6.25mm
Typical Gate Charge @ Vgs
147 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.26mm
Minimum Operating Temperature
-55 °C
Height
1.12mm
Детайли за продукта
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products